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Company News About Si₃N₄ Substrates Boost OBC Designs, Combining Low Dielectric Loss with 3C Fast Charging
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Si₃N₄ Substrates Boost OBC Designs, Combining Low Dielectric Loss with 3C Fast Charging

2026-01-12
Latest company news about Si₃N₄ Substrates Boost OBC Designs, Combining Low Dielectric Loss with 3C Fast Charging

On-board chargers (OBCs) are moving toward higher power density and higher switching frequency while also meeting the stringent efficiency and size demands of 3C fast charging.

Si₃N₄ substrates have a dielectric constant of about 7.5 and low dielectric loss, reducing signal delay and energy loss in high-frequency stages. Combined with good thermal and mechanical performance, they help keep OBC temperatures under control during 3C fast charging while maintaining package reliability.

This enables OEMs to integrate higher-power OBCs into limited under-hood space and achieve “faster charging without larger size or reduced lifetime.”

For brands that position fast-charging experience as a key selling point, treating Si₃N₄ substrates as a fundamental platform component rather than an optional add-on helps secure a durable technical advantage.

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