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Low Dielectric Loss and High Strength Silicon Nitride Ceramic Substrates — The Preferred Choice for Next-Generation Semiconductor Packaging

2025-02-28

As SiC (silicon carbide) and GaN (gallium nitride) technologies continue to reshape the power electronics industry, the demand for reliable, high-performance packaging materials is increasing. Silicon nitride (Si₃N₄) ceramic substrates, featuring low dielectric loss, high insulation strength, and exceptional mechanical toughness, have become a top choice for advanced power module applications.

Made from high-purity Si₃N₄ powder and sintered above 2000°C, the silicon nitride ceramic substrate achieves a dielectric constant below 8 and a loss tangent (tanδ) <0.001, ensuring minimal energy loss at high frequencies. With a bending strength exceeding 800MPa and outstanding thermal shock resistance, the substrate maintains structural integrity even under harsh thermal cycling conditions.

For high-power semiconductor modules such as IGBTs, MOSFETs, and SiC devices, the low dielectric propertyensures efficient signal transmission, while high mechanical strength enhances reliability and vibration resistance. Compared with alumina and aluminum nitride, Si₃N₄ substrates combine high thermal conductivity (>80W/m·K) with superior fracture toughness, making them ideal for EV drive systems, railway traction control units, and fast-charging modules.

Today, silicon nitride ceramic substrates are widely used in new energy motor control systems, industrial inverters, power conversion modules, and 5G base station amplifiers, providing stable insulation and effective heat dissipation. With their unmatched balance of thermal, electrical, and mechanical performance, Si₃N₄ substrates are redefining the standards of next-generation semiconductor packaging.

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