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Company News About High Thermal Conductivity Silicon Nitride Ceramic Substrates Boost Heat Dissipation for EVs and IGBT Modules
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High Thermal Conductivity Silicon Nitride Ceramic Substrates Boost Heat Dissipation for EVs and IGBT Modules

2025-02-02
Latest company news about High Thermal Conductivity Silicon Nitride Ceramic Substrates Boost Heat Dissipation for EVs and IGBT Modules

With the rapid development of electric vehicles (EVs), high-speed rail, and new energy charging systems, thermal management of power devices has become a critical factor in system reliability. The high thermal conductivity silicon nitride (Si₃N₄) ceramic substrate has emerged as a key material for advanced packaging and heat dissipation in third-generation semiconductor devices such as IGBTs, MOSFETs, and SiC modules.

Manufactured from high-purity silicon nitride powder, the substrate is sintered at temperatures above 2000°C using a proprietary formula and hot-pressing process. It achieves a thermal conductivity exceeding 80W/(m·K) while maintaining excellent electrical insulation, low dielectric loss, and high mechanical strength. Compared with alumina and aluminum nitride, Si₃N₄ ceramics offer superior toughness and thermal shock resistance, ensuring longer device lifespan and higher system stability.

In EV motor drive modules, inverters, DC/DC converters, and fast-charging stations, the Si₃N₄ ceramic substrateeffectively reduces junction temperature and enhances heat dissipation efficiency. Its outstanding fracture toughness and resistance to thermal cycling make it ideal for harsh conditions such as hybrid vehicles and rail transit power systems.

Beyond the EV industry, silicon nitride substrates are also used in railway traction systems, power electronic control modules, industrial inverters, and solar inverters. With their combination of high thermal conductivity, electrical insulation, and reliability, Si₃N₄ substrates are redefining the future of power electronics packaging and thermal management.

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