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Company News About AMB-Bonded Si₃N₄–Cu with 25 MPa Strength Ushers in a New Era for Automotive IGBT Packaging
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AMB-Bonded Si₃N₄–Cu with 25 MPa Strength Ushers in a New Era for Automotive IGBT Packaging

2025-01-14
Latest company news about AMB-Bonded Si₃N₄–Cu with 25 MPa Strength Ushers in a New Era for Automotive IGBT Packaging

Active Metal Brazing (AMB) is the key technology for Cu cladding on ceramic substrates in high-power modules, and bond strength directly impacts IGBT/SiC module reliability under thermal cycling and mechanical shock.

By optimizing metallization and filler systems, Si₃N₄–Cu bond strength has been raised to 25 MPa—around 1.5 times that of conventional AlN–Cu stacks. This allows modules with the same copper thickness and layout to withstand higher thermal and mechanical loads.

For automotive-grade inverters, OBCs and DC/DC converters, higher bond strength not only reduces pad delamination risk but also enables “thinner copper, smaller packages,” facilitating higher power density and more compact under-hood layouts.

During module upgrade phases, Si₃N₄ AMB solutions should be trialed early, with A/B comparison of power cycling and thermal shock lifetimes under identical layouts to quantify the reliability gains.

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