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Company News About 110 W/(m·K) High-Thermal-Conductivity Si₃N₄ Substrates Enter Mass Production in China
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110 W/(m·K) High-Thermal-Conductivity Si₃N₄ Substrates Enter Mass Production in China

2025-01-06
Latest company news about 110 W/(m·K) High-Thermal-Conductivity Si₃N₄ Substrates Enter Mass Production in China

For years, high-thermal, high-strength ceramic substrates were dominated by overseas suppliers, and local products often lagged in thermal performance and reliability, limiting the upgrade space of domestic power modules and e-drive systems.

The latest generation of Chinese-made Si₃N₄ ceramic substrates has achieved a measured thermal conductivity of 110 W/(m·K) while maintaining flexural strength above 800 MPa, combining “high thermal performance + high toughness.” This narrows the gap to premium imported products and, in some applications, enables consolidation of multiple devices into a single module.

In EV motor inverters, charging-station power stages and rail traction systems, adopting these substrates can either lower junction temperature under the same cooling conditions or increase power density at the same junction temperature, enabling more compact and reliable designs.

For design teams already limited by thermal bottlenecks but reluctant to complicate cooling structures, switching to high-thermal Si₃N₄ substrates is often more cost-effective than upgrading cold plates or increasing airflow.

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